2001 Fairchild Semiconductor Corporation
November 2001
Rev. A, November 2001
I
R
F
8
40B/I
RF
S
840B
IRF840B/IRFS840B
500V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary,
planar, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supplies,
power factor correction and electronic lamp ballasts based
on half bridge.
Features
8.0A, 500V, R
DS(on)
= 0.8
@V
GS
= 10 V
Low gate charge ( typical 41 nC)
Low Crss ( typical 35 pF)
Fast switching
100% avalanche tested
Improved dv/dt capability
Absolute Maximum Ratings
T
C
= 25C unless otherwise noted
* Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
Parameter
IRF840B
IRFS840B
Units
V
DSS
Drain-Source Voltage
500
V
I
D
Drain Current
- Continuous (T
C
= 25C)
8.0
8.0
A
- Continuous (T
C
= 100C)
5.1
5.1
A
I
DM
Drain Current
- Pulsed
(Note 1)
32
32
A
V
GSS
Gate-Source Voltage
30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
320
mJ
I
AR
Avalanche Current
(Note 1)
8.0
A
E
AR
Repetitive Avalanche Energy
(Note 1)
13.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
3.5
V/ns
P
D
Power Dissipation (T
C
= 25C)
134
44
W
- Derate above 25C
1.08
0.35
W/C
T
J
, T
STG
Operating and Storage Temperature Range
-55 to +150
C
T
L
Maximum lead temperature for soldering purposes,
1/8
"
from case for 5 seconds
300
C
Symbol
Parameter
IRF840B
IRFS840B
Units
R
JC
Thermal Resistance, Junction-to-Case Max.
0.93
2.86
C
/
W
R
CS
Thermal Resistance, Case-to-Sink Typ.
0.5
--
C
/
W
R
JA
Thermal Resistance, Junction-to-Ambient Max.
62.5
62.5
C
/
W
TO-220
IRF Series
G
S
D
S
D
G
TO-220F
IRFS Series
G
S
D
Rev. A, November 2001
I
R
F
8
40B/I
RF
S
840B
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
2001 Fairchild Semiconductor Corporation
Electrical Characteristics
T
C
= 25C unless otherwise noted
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 9.0mH, I
AS
= 8.0A, V
DD
= 50V, R
G
= 25
,
Starting T
J
= 25C
3. I
SD
8.0A, di/dt
200A/
s, V
DD
BV
DSS,
Starting T
J
= 25C
4. Pulse Test : Pulse width
300
s, Duty cycle
2%
5. Essentially independent of operating temperature
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= 250
A
500
--
--
V
BV
DSS
/
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250
A, Referenced to 25C
--
0.55
--
V/C
I
DSS
Zero Gate Voltage Drain Current
V
DS
= 500 V, V
GS
= 0 V
--
--
10
A
V
DS
= 400 V, T
C
= 125C
--
--
100
A
I
GSSF
Gate-Body Leakage Current, Forward
V
GS
= 30 V, V
DS
= 0 V
--
--
100
nA
I
GSSR
Gate-Body Leakage Current, Reverse
V
GS
= -30 V, V
DS
= 0 V
--
--
-100
nA
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250
A
2.0
--
4.0
V
R
DS(on)
Static Drain-Source
On-Resistance
V
GS
= 10 V, I
D
= 4.0 A
--
0.65
0.8
g
FS
Forward Transconductance
V
DS
= 40 V, I
D
= 4.0 A
--
7.3
--
S
Dynamic Characteristics
C
iss
Input Capacitance
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
1400
1800
pF
C
oss
Output Capacitance
--
145
190
pF
C
rss
Reverse Transfer Capacitance
--
35
45
pF
Switching Characteristics
t
d(on)
Turn-On Delay Time
V
DD
= 250 V, I
D
= 8.0 A,
R
G
= 25
--
22
55
ns
t
r
Turn-On Rise Time
--
65
140
ns
t
d(off)
Turn-Off Delay Time
--
125
260
ns
t
f
Turn-Off Fall Time
--
75
160
ns
Q
g
Total Gate Charge
V
DS
= 400 V, I
D
= 8.0 A,
V
GS
= 10 V
--
41
53
nC
Q
gs
Gate-Source Charge
--
6.5
--
nC
Q
gd
Gate-Drain Charge
--
17
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain-Source Diode Forward Current
--
--
8.0
A
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
--
--
32
A
V
SD
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 8.0 A
--
--
1.4
V
t
rr
Reverse Recovery Time
V
GS
= 0 V, I
S
= 8.0 A,
dI
F
/ dt = 100 A/
s
--
390
--
ns
Q
rr
Reverse Recovery Charge
--
4.2
--
C
Rev. A, November 2001
2001 Fairchild Semiconductor Corporation
I
R
F
8
40B/I
RF
S
840B
0
5
10
15
20
25
30
0.5
1.0
1.5
2.0
2.5
3.0
V
GS
= 20V
V
GS
= 10V
Note : T
J
= 25
R
DS
(
O
N)
[
],
D
r
ai
n-
S
o
u
r
c
e
O
n
-
R
es
i
s
t
anc
e
I
D
, Drain Current [A]
2
4
6
8
10
10
-1
10
0
10
1
150
o
C
25
o
C
-55
o
C
Notes :
1. V
DS
= 40V
2. 250
s Pulse Test
I
D
,
D
r
ai
n C
u
r
r
e
nt
[
A
]
V
GS
, Gate-Source Voltage [V]
10
-1
10
0
10
1
10
-1
10
0
10
1
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
Bottom : 5.0 V
Notes :
1. 250
s Pulse Test
2. T
C
= 25
I
D
,
D
r
ai
n C
u
r
r
e
n
t
[
A
]
V
DS
, Drain-Source Voltage [V]
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
V
DS
= 250V
V
DS
= 100V
V
DS
= 400V
Note : I
D
= 8.0 A
V
GS
,
G
a
t
e
-
S
ou
r
c
e V
o
l
t
age [
V
]
Q
G
, Total Gate Charge [nC]
10
-1
10
0
10
1
0
500
1000
1500
2000
2500
3000
C
oss
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
C
rss
= C
gd
Notes :
1. V
GS
= 0 V
2. f = 1 MHz
C
rss
C
iss
C
apa
c
i
t
a
nc
e [
p
F]
V
DS
, Drain-Source Voltage [V]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
-1
10
0
10
1
150
Notes :
1. V
GS
= 0V
2. 250
s Pulse Test
25
I
DR
,
R
e
v
e
r
s
e D
r
ai
n C
u
r
r
e
n
t
[
A
]
V
SD
, Source-Drain voltage [V]
Typical Characteristics
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
Figure 2. Transfer Characteristics
Figure 1. On-Region Characteristics
2001 Fairchild Semiconductor Corporation
Rev. A, November 2001
I
R
F
8
40B/I
RF
S
840B
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
100 ms
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
, D
r
a
i
n
C
u
r
r
e
n
t
[A
]
V
DS
, Drain-Source Voltage [V]
25
50
75
100
125
150
0
2
4
6
8
10
I
D
,
D
r
ai
n C
u
r
r
e
nt
[
A
]
T
C
, Case Temperature [
]
10
0
10
1
10
2
10
3
10
-2
10
-1
10
0
10
1
10
2
10
s
DC
10 ms
1 ms
100
s
Operation in This Area
is Limited by R
DS(on)
Notes :
1. T
C
= 25
o
C
2. T
J
= 150
o
C
3. Single Pulse
I
D
,
D
r
ai
n C
u
r
r
e
nt
[
A
]
V
DS
, Drain-Source Voltage [V]
-100
-50
0
50
100
150
200
0.0
0.5
1.0
1.5
2.0
2.5
3.0
Notes :
1. V
GS
= 10 V
2. I
D
= 4.0 A
R
DS
(
O
N
)
,
(
N
or
m
a
l
i
z
ed)
D
r
ai
n-
Sour
c
e
O
n
-
R
es
i
s
t
a
n
c
e
T
J
, Junction Temperature [
o
C]
-100
-50
0
50
100
150
200
0.8
0.9
1.0
1.1
1.2
Notes :
1. V
GS
= 0 V
2. I
D
= 250
A
BV
DS
S
,
(
N
or
m
a
l
i
z
e
d)
D
r
a
i
n-
S
o
ur
c
e
B
r
ea
k
d
o
w
n
V
o
l
t
ag
e
T
J
, Junction Temperature [
o
C]
Typical Characteristics
(Continued)
Figure 9-1. Maximum Safe Operating Area
for IRF840B
Figure 10. Maximum Drain Current
vs Case Temperature
Figure 7. Breakdown Voltage Variation
vs Temperature
Figure 8. On-Resistance Variation
vs Temperature
Figure 9-2. Maximum Safe Operating Area
for IRFS840B
Rev. A, November 2001
2001 Fairchild Semiconductor Corporation
I
R
F
8
40B/I
RF
S
840B
Typical Characteristics
(Continued)
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
(t) = 0 .9 3
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t), T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-1. Transient Thermal Response Curve for IRF840B
t
1
P
DM
t
2
1 0
-5
1 0
-4
1 0
-3
1 0
-2
1 0
-1
1 0
0
1 0
1
1 0
-2
1 0
-1
1 0
0
N o te s :
1 . Z
J C
(t) = 2 .8 6
/W M a x .
2 . D u ty F a c to r, D = t
1
/t
2
3 . T
J M
- T
C
= P
D M
* Z
J C
(t)
s in g le p u ls e
D = 0 .5
0 .0 2
0 .2
0 .0 5
0 .1
0 .0 1
Z
JC
(t), T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
t
1
, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for IRFS840B
t
1
P
DM
t
2
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